Characteristics of amplified spontaneous emission of high indium content InGaN/GaN quantum wells with various silicon doping conditions

CHIH-CHUNG YANGCheng, Y.-C.Y.-C.ChengLin, E.-C.E.-C.LinFeng, S.-W.S.-W.FengWang, H.-C.H.-C.WangYang, C.C.C.C.YangMa, K.-J.K.-J.MaPan, C.-C.C.-C.PanChyi, J.-I.J.-I.ChyiCHIH-CHUNG YANG2018-09-102018-09-102003http://www.scopus.com/inward/record.url?eid=2-s2.0-84875096958&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/302064[SDGs]SDG7Characteristics of amplified spontaneous emission of high indium content InGaN/GaN quantum wells with various silicon doping conditionsconference paper10.1002/pssc.200303474