S. C LinJAMES-B KUO2018-09-102018-09-101999-01https://www.scopus.com/inward/record.uri?eid=2-s2.0-0032760793&doi=10.1109%2f16.737467&partnerID=40&md5=8aacfb61137c2b0e1931976a9895d1e5This paper reports a closed-form analytical temperaturedependent kink effect model for the partially-depleted SOI NMOS devices. Based on the body-emitter voltage model, an analytical triggering Vbs formula for temperature-dependent kink effect has been obtained. According to the analytical model, at a higher operation temperature and with a lighter Ihin-lilm doping density, the onset of the kink effect occurs at a larger Vbs-© 1999 IEEE.Electric potential; Semiconductor device models; Semiconductor doping; Silicon on insulator technology; Thermal effects; Thin films; Temperature-dependent kink effects; MOS devicesjournal article10.1109/16.7374672-s2.0-0032760793WOS:000077769000034