Hong CZhou JCheng QZhu KKuo J.BChen Y.JAMES-B KUO2021-09-022021-09-02201721686734https://www.scopus.com/inward/record.uri?eid=2-s2.0-85028403782&doi=10.1109%2fJEDS.2017.2704106&partnerID=40&md5=52b20fc5b40d02dba1ae6ba2ba799fdahttps://scholars.lib.ntu.edu.tw/handle/123456789/580945This paper presents a unified continuous and discrete model covering all device operating regions of double-gate MOSFETs for the first time. With a specific variable transformation method, the 1-D Poisson's equation in the Cartesian coordinate for double-gate MOSFETs is transformed into the corresponding form in the cylindrical coordinate. Such a transformed cylindrical Poisson's equation results in a simple algebraic equation, which correlates the (inversion-charge induced) surface potential to the field and allows the long-channel drain-current formula to be derived from the Pao-Sah integral. This model can be readily applied to predict the effects of both continuous and discrete doping variations. The short-channel-effect model is also developed by solving the 2-D Poisson's equation using the eigenfunction-expansion method. The accuracy of both long-channel and short-channel models is confirmed by the numerical calculations and TCAD simulations. ? 2013 IEEE.Drain current; Eigenvalues and eigenfunctions; Poisson equation; Cartesian coordinate; Cylindrical coordinates; discrete dopant variations; Double gate MOSFET; Eigenfunction expansion methods; Numerical calculation; Surface field; Variable transformation; MOSFET devicesjournal article10.1109/JEDS.2017.27041062-s2.0-85028403782