Gate Area and Dose Effects on the Characerization of Oxide Radiation Hardness and Hot-Electron Resistance of MOS Devices by Repeated Irradiation-Then-Anneal Treatments.

胡振國Lin, J. J.J. J.LinHwu, Jenn-GwoJenn-GwoHwu2009-04-272018-07-062009-04-272018-07-061991http://ntur.lib.ntu.edu.tw//handle/246246/153908en-USGate Area and Dose Effects on the Characerization of Oxide Radiation Hardness and Hot-Electron Resistance of MOS Devices by Repeated Irradiation-Then-Anneal Treatments.report