Dept. of Electr. Eng., National Taiwan Univ.Lin, Ming-ShanMing-ShanLinHuang, Din-WeiDin-WeiHuangYang, C.C.C.C.Yang2007-04-192018-07-062007-04-192018-07-061995-10http://ntur.lib.ntu.edu.tw//handle/246246/2007041910032102In this paper, we report the experimental results of efficient nonlinear polarization switching in a single quantum well amplifier and show that the numerical simulations based on a simple model agree reasonably well with the experimental data. The sample consisted of an InGaAs well, GaAs barriers, and graded AlGaAs cladding layers. It lased at 974 nm. The electro-luminescence shows a peak near 970 nm in the TE mode and a peak near 940 nm in the TM mode.application/pdf153018 bytesapplication/pdfen-US[SDGs]SDG7Power-dependent polarization switching and pulse narrowing in a semiconductor quantum well amplifierjournal article10.1109/LEOS.1995.484895http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910032102/1/00484895.pdf