Dept. of Electr. Eng., National Taiwan Univ.Cheng, Yung-ChenYung-ChenChengLin, En-ChiangEn-ChiangLinFeng, Shih-WeiShih-WeiFengWang, Hsiang-ChenHsiang-ChenWangCHIH-CHUNG YANGMa, Kung-JenKung-JenMaShi, Shih-ChenShih-ChenShiLI-CHYONG CHENPan, Chang-ChiChang-ChiPanChyi, Jen-InnJen-InnChyi2018-09-102018-09-102003http://www.scopus.com/inward/record.url?eid=2-s2.0-84955075952&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/302053https://www.scopus.com/inward/record.uri?eid=2-s2.0-84955075952&doi=10.1109%2fCLEOPR.2003.1274504&partnerID=40&md5=e885c0e1de51d2a7814905411cd15581The effects of thermal annealing on the optical properties and material structures of InGaN/GaN quantum wells with silicon doping were studied to find that the material microstructures alternation was the major reason for the changes. © 2003 IEEE.application/pdf86973 bytesapplication/pdfNanostructures; Optical properties; Photonics; Quantum well lasers; InGaN/GaN quantum well; Material microstructures; Properties and materials; Silicon doping; Thermal-annealing; Semiconductor quantum wellsconference paper10.1109/CLEOPR.2003.12745042-s2.0-84955075952