Optical properties and material studies of InGaN/GaN multi-quantum well light emitting diode wafers with different structures

Kuo, T.W.T.W.KuoLin, T.Y.T.Y.LinFeng, Z.C.Z.C.FengLiu, W.W.LiuChua, S.J.S.J.ChuaTsai, H.L.H.L.TsaiYang, J.R.J.R.YangHuang, Y.S.Y.S.HuangFerguson, I.T.I.T.FergusonLu, W.W.LuJER-REN YANG2020-05-122020-05-122009https://scholars.lib.ntu.edu.tw/handle/123456789/491605Optical properties and material studies of InGaN/GaN multi-quantum well light emitting diode wafers with different structuresconference paper10.1117/12.8258952-s2.0-70349898025https://www.scopus.com/inward/record.uri?eid=2-s2.0-70349898025&doi=10.1117%2f12.825895&partnerID=40&md5=86c5c756de7b945e2bc69ff5cf5f8e0e