Liang Y.-THuang Y.-TWu C.-HLin H.-Y.CHAO-HSIN WU2021-09-022021-09-022020https://www.scopus.com/inward/record.uri?eid=2-s2.0-85098721821&doi=10.1109%2fOECC48412.2020.9273560&partnerID=40&md5=32b37a0c7d5f88e259fdd7e89bf99ed4https://scholars.lib.ntu.edu.tw/handle/123456789/580575We develop an opto-electrical NOR gate, using Light-Emitting Transistors (LET) on GaAs substrate by the monolithically integrated fabrication. By dual-input and dual-output (electrical and optical) characteristics, it can be applied to Opto-Electrical Integrated Circuits (OEICs). ? 2020 IEEE.Gallium arsenide; III-V semiconductors; Light emission; Optoelectronic devices; Phototransistors; Substrates; Dual outputs; GaAs substrates; Light-emitting transistors; Monolithically integrated; NOR gates; Monolithic integrated circuits[SDGs]SDG7conference paper10.1109/OECC48412.2020.92735602-s2.0-85098721821