Bhusari D.M.Chen C.K.Chen K.H.Chuang T.J.Chen L.C.Lin M.C.LI-CHYONG CHEN2022-08-092022-08-09199708842914https://www.scopus.com/inward/record.uri?eid=2-s2.0-0031078373&doi=10.1557%2fJMR.1997.0045&partnerID=40&md5=ead8e2a5683286eabba4c3b91cd0705bhttps://scholars.lib.ntu.edu.tw/handle/123456789/616458We report here on the synthesis of large crystals of Si-containing carbon nitride, consisting of a predominantly C-N network, by microwave CVD. The Si content in this material varies from crystal to crystal and also with the deposition conditions and has been observed to be as low as less than 5 at. % in some crystals, wherein the Si atoms are believed to substitute for some of the C sites only. This is the first time that such large and well-faceted crystals consisting almost entirely of carbon-nitride network have been synthesized. Moreover, there is no obvious deposition of amorphous CN material.Carbon;Chemical vapor deposition;Composition;Crystals;Semiconducting silicon compounds;Synthesis (chemical);Silicon carbon nitride;Nitridesjournal article10.1557/JMR.1997.00452-s2.0-0031078373