李嗣涔臺灣大學：電子工程學研究所陳嫈穎Chen, Ying-YingYing-YingChen2007-11-272018-07-102007-11-272018-07-102004http://ntur.lib.ntu.edu.tw//handle/246246/57262藉由在砷化銦量子點上誘W2奈米的鋁砷化鎵，使得3 ML的砷化銦/鋁砷化鎵/砷化鎵量子點紅外線偵測器具有5.6、9.5以及15.7 μm多波段之響應。根據隨雷射必v變化之光激放光頻譜(PL)可得知，短波長波段的響應是從大顆或是小顆量子點的基態到砷化鎵傳導帶造成的，而長波長波段的響應則是大顆量子點的基態到激發態所貢獻的。此外，由2.2 ML的砷化銦/鋁砷化鎵/砷化鎵量子點紅外線偵測器可觀察到較高的響應值以及負微分電導的效應。本文中同樣詳細探討具有鋁砷化鎵以及銦鋁砷化鎵阻擋層的砷化銦/砷化鎵量子點紅外線偵測器。其中不同成分的銦鋁砷化鎵阻擋層所造成之影響亦被研究。增加阻擋層中銦的濃度，位障高度便會降低。而使用較低的阻擋層，其目的是減少暗電流，但仍保持相當的光電流。By capping the InAs quantum dots (QDs) with 2 nm AlGaAs layer, the 3 monolayer (ML) InAs/AlGaAs/GaAs quantum dot infrared photodetector (QDIP) exhibits multi-peaks at 5.6, 9.5, and 15.7 μm, respectively. According to the laser power dependent PL spectra, the short-wavelength peaks are responsible for the large and small QDs size distributions from the ground state to GaAs conduction band, respectively. However, the long-wavelength peak is attributed to the bound-to-bound transition from ground to first excited state of large QD. The properties of 2.2 ML InAs/AlGaAs/GaAs QDIPs are also investigated. The phenomena of high responsivity and negative differential conductance (NDC) are observed. Then, the characteristics of the QDIP clamping with Al0.3Ga0.7As and In0.17Al0.25Ga0.58As blocking barrier layers are discussed. Besides, QDIPs with two InxAlyGa1-x-yAs blocking layers are also investigated. When the In composition increases, the blocking barriers would be lower. The purpose is to decrease the dark current without affecting photocurrent.Chapter 1 Introduction 1 Chapter 2 The Fundamentals of Infrared Detectors and Experiments 4 2.1 The Fundamentals of QDIP 4 2.1.1 Thermal Radiation 4 2.1.2 Infrared Detectors 6 2.1.3 Quantum Dot Infrared Photodetectors 9 2.2 Process Flow 11 2.2.1 Fabrication Processes 12 2.2.2 H3PO4-H2O2-H2O Etching Solution 17 2.2.3 Lift-off Process 20 2.3 Measurement Systems 20 2.3.1 Current-Voltage Measurement 21 2.3.2 Introduction of FTIR 21 2.3.3 Relative Spectral Response 25 2.3.4 Absolute Responsivity 27 2.3.5 Specific Detectivity 30 Chapter 3 The Characteristics of InAs/AlGaAs/GaAs Quantum Dot Infrared Photodetector 31 3.1 The InAs/AlGaAs/GaAs QDIP 32 3.1.1 Sample Preparation 32 3.1.2 Photoluminescence Measurement 34 3.1.3 Results and Discussion 38 3.2 The Effect of InAs QD Thickness 59 3.2.1 Sample Preparation 59 3.2.2 Results and Discussion 59 Chapter 4 The Characteristics of QDIPs 75 4.1 QDIP Clamping with Al0.3Ga0.7As and In0.17Al0.25Ga0.58As Blocking Layers 76 4.1.1 Sample Structure 76 4.1.2 Results and Discussion 76 4.2 The Effects of the InxAlyGa1-x-yAs Blocking Layers 89 4.2.1 Sample Structure 89 4.2.2 Results and Discussion 89 Chapter 5 Conclusions 99 Bibliography 1011009219 bytesapplication/pdfen-US量子點紅外線偵測器量子點多波段Multi-ColorQuantum Dot Infrared PhotodetectorQuantum Dotthesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/57262/1/ntu-93-R91943027-1.pdf