Base transit time of graded-base Si/SiGe HBTs considering recombination lifetime and velocity saturation

CHEE-WEE LIUChang, S.T.S.T.ChangLiu, C.W.C.W.LiuLu, S.C.S.C.LuCHEE-WEE LIU2018-09-102018-09-102004http://www.scopus.com/inward/record.url?eid=2-s2.0-0242303639&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/309380Base transit time of graded-base Si/SiGe HBTs considering recombination lifetime and velocity saturationjournal article10.1016/S0038-1101(03)00325-3