Hsieh, I-ChiehI-ChiehHsiehChen, Ting-YiTing-YiChenTsai, Chun-PuChun-PuTsaiZheng, Hong-SenHong-SenZhengWEI-CHANG LI2025-11-272025-11-27202510577157https://www.scopus.com/record/display.uri?eid=2-s2.0-105019673036&origin=resultslisthttps://scholars.lib.ntu.edu.tw/handle/123456789/734201This paper presents a passive temperature compensation technique for CMOS-MEMS resonators, utilizing an arc-beam structure to induce temperature-dependent electrical stiffness. Implemented in a standard 0.35- μm 2-poly-4-metal CMOS-MEMS process, the method achieves significant improvement in frequency stability. Specifically, for a 2.08-MHz free-free beam (FF-beam) resonator, the first-order temperature coefficient of frequency (TCF1) is reduced from -88.56 ppm/°C to + 1.68 ppm/°C, and the overall frequency drift over the temperature range of 0°C to 90°C is lowered from 8236 ppm to 1985 ppm, a 4.15-fold improvement. A comprehensive theoretical model, validated by test keys, accurately predicts gap spacing and frequency behavior. Compared to previous electrical-stiffness-based compensation structures, the arc-beam design is more area-efficient, requires no additional fabrication steps, and is fully compatible with standard CMOS processes. This approach enables compact, power-efficient frequency stabilization and is readily applicable to a broad range of resonator topologies.falseCMOS-MEMSelectrical stiffnessfrequency stabilityMEMS resonatortemperature compensationjournal article10.1109/JMEMS.2025.36123132-s2.0-105019673036