Prestrained effect on the emission properties of InGaN/GaN quantum-well structures

Huang, C.-F.C.-F.HuangTang, T.-Y.T.-Y.TangHuang, J.-J.J.-J.HuangShiao, W.-Y.W.-Y.ShiaoYang, C.C.C.C.YangHsu, C.-W.C.-W.HsuCHIH-CHUNG YANG2020-06-182020-06-18200600036951https://scholars.lib.ntu.edu.tw/handle/123456789/503396Prestrained effect on the emission properties of InGaN/GaN quantum-well structuresjournal article10.1063/1.2335384