Complementary inverters composed of SnO and SnO2 thin-film transistors using a single-step deposition of the channel layer

Y.-S. LiH.-L. YangI-C. ChengI-CHUN CHENG2019-10-312019-10-312016https://scholars.lib.ntu.edu.tw/handle/123456789/429492Complementary inverters composed of SnO and SnO2 thin-film transistors using a single-step deposition of the channel layerconference paper