Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings

胡振國Wu, Y. L.Y. L.WuKuo, K. M.K. M.KuoHwu, Jenn-GwoJenn-GwoHwu2009-04-272018-07-062009-04-272018-07-061994http://ntur.lib.ntu.edu.tw//handle/246246/154357en-USImprovement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealingsconference paper