Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2, N2/H2, and NH3 plasma treatments

M. H.LiaoLi-Tien HuangMing-Lun ChangJhih-Jie HuangChin-Lung KuoHsin-ChihLinMin-Hung LeeMiin-Jang Chen2019-03-112019-03-112012https://scholars.lib.ntu.edu.tw/handle/123456789/404524Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2, N2/H2, and NH3 plasma treatmentsjournal article