Formation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixing

CHEE-WEE LIUChen, P.S.P.S.ChenLee, S.W.S.W.LeeLee, M.H.M.H.LeeCHEE-WEE LIU2018-09-102018-09-102008http://www.scopus.com/inward/record.url?eid=2-s2.0-45049084363&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/341155Formation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixingjournal article10.1016/j.apsusc.2008.02.180