Variation-Tolerant Recall Operation for Nonvolatile SRAM Integrated with Ferroelectric Capacitor

Li, Ai FangAi FangLiHuang, Ruei YuRuei YuHuangVITA PI-HO HU2023-04-242023-04-242022-01-019781665421775https://scholars.lib.ntu.edu.tw/handle/123456789/630417We proposed a variation-tolerant recall scheme for nonvolatile 6T SRAM (NV-SRAM) integrated with two ferroelectric capacitors. Two recall schemes (Type-1 and Type-2) are analyzed considering the impact of threshold voltage mismatch in SRAM cells. The proposed recall scheme (Type-2) shows higher variation immunity as the coercive electric field (Ec) reduces and remanent polarization (Pr) increases. The Type-2 recall scheme with optimized ferroelectric parameters can tolerate 110 mV threshold voltage mismatch, which is 4.23 times larger than the Type-1 recall scheme. The proposed variation-tolerant NV-SRAM with ferroelectric capacitors is a promising solution for ultralow-power embedded memory applications.ferroelectric capacitor | nonvolatile SRAM (NV-SRAM) | variation-tolerantVariation-Tolerant Recall Operation for Nonvolatile SRAM Integrated with Ferroelectric Capacitorconference paper10.1109/EDTM53872.2022.97980002-s2.0-85133960418https://api.elsevier.com/content/abstract/scopus_id/85133960418