Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices

Wei, J.-Y.J.-Y.WeiMaikap, S.S.MaikapLee, M.H.M.H.LeeLee, C.C.C.C.LeeLiu, C.W.C.W.Liu2009-03-252018-07-062009-03-252018-07-062006http://ntur.lib.ntu.edu.tw//handle/246246/148234application/pdf140449 bytesapplication/pdfen-USHole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devicesjournal articlehttp://ntur.lib.ntu.edu.tw/bitstream/246246/148234/1/63.pdf