An analysis of small-signal gate-drain resistance effect on RF power MOSFETs

SHEY-SHI LU2018-09-102018-09-102003http://www.scopus.com/inward/record.url?eid=2-s2.0-0038394648&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/303337An analysis of small-signal gate-drain resistance effect on RF power MOSFETsjournal article10.1109/TED.2002.808516