C. R. LuH. L. LiuJ. R. LeeC. H. WuL. W. SungHAO-HSIUNG LIN2018-09-102018-09-102005-11https://www.scopus.com/inward/record.uri?eid=2-s2.0-29144443686&doi=10.1016%2fj.jpcs.2005.09.059&partnerID=40&md5=07d9cfd392ead596fc6676253c672fc7Optical properties of InGaAsN/GaAs and InGaAsN/GaAsN/GaAs quantum well structures with InGaP cladding layers were studied by photoreflectance at various temperatures. The excitonic interband transitions of the InGaAsN/GaAsN/GaAs QW systems were observed in the spectral range above hν=Eg(InGaAsN). The confinement potential of the system with strain compensating GaAsN barriers became one step broader, thus more quantum states and larger optical transition rate were observed. A matrix transfer algorithm was used to calculate the subband energies numerically. Band gap energies, effective masses were adopted from the band anti-crossing model with band-offset values adjusted to obtain the subband energies to best fit the observed optical transition features. A spectral feature below and near the GaAs band gap energy from GaAs barriers is enhanced by the GaAs/InGaP interface space charge accumulation induced internal field. © 2005 Elsevier Ltd. All rights reserved.A. Quantum wells; A. Semiconductors; D. Optical propertiesMathematical models; Optical properties; Phase transitions; Semiconducting indium compounds; Semiconductor materials; A. quantum wells; A. semiconductors; D. optical properties; Semiconductor quantum wellsjournal article10.1016/j.jpcs.2005.09.0592-s2.0-29144443686WOS:000234288700058