Fabrication and characterization of InGaAs fin structure high electron mobility transistors

Chang, C.-M.C.-M.ChangChang, L.-C.L.-C.ChangCHAO-HSIN WU2020-06-292020-06-292016https://scholars.lib.ntu.edu.tw/handle/123456789/505931[SDGs]SDG7Fabrication and characterization of InGaAs fin structure high electron mobility transistorsconference paper10.1109/ICIPRM.2016.75286492-s2.0-84992093020https://www.scopus.com/inward/record.uri?eid=2-s2.0-84992093020&doi=10.1109%2fICIPRM.2016.7528649&partnerID=40&md5=2ca4b6ac96a6693d144649c28562fd61