Nilabh BasuChun-Pu TsaiTing-Yi ChenWEI-CHANG LI2025-05-222025-05-222025-01-19https://www.scopus.com/record/display.uri?eid=2-s2.0-105001660909&origin=resultslisthttps://scholars.lib.ntu.edu.tw/handle/123456789/729625This work demonstrates for the first time a quick settling enhancement mode MEMS resoswitch that alleviates the lengthy transient response seen in conventional resoswitches by stiffness engineered output electrodes for high bit-rate applications. Particularly, instead of using typical rigid output electrodes, this work adopts compliant arc-beam structures to form a normally closed electrical path that bypasses the shared mechanical and electrical contact unavoidable in regular resoswitches. This proposed output electrode design allows stiffness controlled soft landing and therefore stable electrical conduction regardless of the varying mechanical contact force originated from the resonant structure. Doing so greatly reduces the transient time of a 125-kHz resoswitch by 5 folds, from 1 ms to 0.2 ms, without the need for input waveform modification required for the pre-energization technique that has previously been shown to successfully increase the bit-rate of resoswitches.CMOS-MEMScomb-drivesimpact dynamicsMEMS resonatornonlinearityResoswitchconference paper10.1109/MEMS61431.2025.10917641