Ming-Chun HongYao-Jen ChangYu-Chen HsinLiang-Ming LiuKuan-Ming ChenYi-Hui SuGuan-Long ChenShan-Yi YangI-Jung WangSK Ziaur RahamanHsin-Han LeeShih-Ching ChiuChen-Yi ShihChih-Yao WangFang-Ming ChenJeng-Hua WeiShyh-Shyuan SheuWei-Chung LoMinn-Tsong LinChih-I WuTuo-Hung Hou2024-10-232024-10-232022-06-12https://scholars.lib.ntu.edu.tw/handle/123456789/722332A universal MRAM technology is proposed to fulfill versatile applications ranging from quantum computing to automotive electronics across a wide operating temperature range of 4K to 400K. An ultrathin (1.4 nm) CoFeB composite free layer with an Mg spacer is designed to enlarge breakdown voltage and write margin, decrease switching current, and maintain thermal stability and magnetoresistance ratio at all temperatures. High endurance (>1011) and excellent reliability (write margin > 0.4 V) are achieved from 4K to 400K without compromising speed (10 ns) and retention (10 years at 300K).conference paper10.1109/vlsitechnologyandcir46769.2022.9830503