Kuo C.-THsu L.-HLai Y.-YKuo H.-CCHIEN-CHUNG LINCheng Y.-J.2023-06-092023-06-092016https://www.scopus.com/inward/record.uri?eid=2-s2.0-85010682386&doi=10.1364%2fcleo_at.2016.jth2a.85&partnerID=40&md5=e1b46d8d592bbcb2b153f52e3d24ba38https://scholars.lib.ntu.edu.tw/handle/123456789/632164We report a site-controlled growth of InN on a GaN substrate. Crystalline InN micropillars were selectively grown from the hexagonal V-pits on GaN surface. The grown mechanism and photoluminescent property will be discussed. © 2016 OSA.Chromium compounds; Crystalline materials; Gallium nitride; III-V semiconductors; Indium compounds; Controlled growth; Crystalline growth; GaN substrate; Gan surfaces; Micro-pillars; Photo-luminescent properties; Vanadium compoundsconference paper10.1364/cleo_at.2016.jth2a.852-s2.0-85010682386