吳忠幟Wu, Chung-chih臺灣大學:電子工程學研究所楊朝舜Yang, Chao-ShunChao-ShunYang2010-07-142018-07-102010-07-142018-07-102008U0001-2907200813230200http://ntur.lib.ntu.edu.tw//handle/246246/189063氧化物半導體近年來漸漸受到學術界和產業界的重視，由於氧化物半導體材料多具有寬能隙的性質，使其薄膜呈現透明狀態，能運用在透明電子元件上。氧化物半導體電晶體重要的應用包括液晶顯示、OLED、電子紙…等。另外Oxide TFTs 可以製作在軟性基板上，將來螢幕能捲起來隨身攜帶。 氧化物半導體具有獨特的電子組態：(n-1)d10ns0 (n≧4)，因具有球對稱的s軌域，使得氧化物半導體無論晶格排列是否規則，都能有很高的載子移動率，而且能在室溫下製作出特性良好的薄膜，製程溫度低，成本低，值得學術界和科技業投資。 本論文研究的氧化物半導體為氧化銦，並將此材料製作成薄膜電晶體；一般而言，氧化銦薄膜的導電性較高，許多國家的實驗室以此材料製作出來的電晶體漏電流太高，開關比的大小不足，未達實用化的門檻；在本論文中將運用特殊方法，控制氧化銦的性質，大幅降低漏電流，較目前各國相關實驗結果之開關比提升1000 倍以上。Recently, oxide semiconductors have gained much attention in the academia and the industry. Oxide semiconductors usually are of transparency owing to their wide band-gap characteristics and can be used in transparent electronics. Applications concerned have been developed in the market gradually. In addition, oxidesemiconductor-based thin film transistors can be fabricated on flexible substrates. Its flexibility can be used in a lot of novel consumer electronics and displays like LC displays、OLED displays and e-Paper etc. Oxide semiconductors have special electronic configuration of (n-1)d10ns0 (n≧4).Because of the symmetric s orbital, oxide semiconductor can attain high mobility in both crystalline and amorphous structures. Actually, oxide semiconductor thin films can be grown with good quality on a wide variety of substrates at low temperatures. In this thesis, the oxide semiconductor material studied is indium oxide. Indium oxide is used as the active material of TFTs in this thesis. In general, indium oxidehin films are very conductive, and thus many laboratories over the world have much difficulty in making indium oxide TFTs with low enough off currents and proper on/off current ratios. In the thesis, unique method is introduced to reduce the off currents dramatically. By using the unique method, the on/off ratios of our indium oxide TFTs are over 1000 times higher than results of other groups.Chapter 1 簡介………………………………………………1.1 氧化物半導體簡介………………………………………1.2 論文結構…………………………………………………6hapter 2 氧化銦薄膜電晶體之製作及量測………………7hapter 3 透明氧化銦薄膜電晶體實驗結果與討論………12.1 氧化銦薄膜電晶體特性簡介……………………………12.2 使用傳統真空濺鍍機鍍膜方式所得之氧化銦薄膜電晶體特性…14.3 運用獨特方法製作氧化銦薄膜電晶體以提高on/off current ratio…………22.4 Indium Oxide TFT製程溫度之影響……………………25.5 氧化銦薄膜厚度對電晶體元件的影響和薄膜非結晶性的探討…………27.6 濺鍍腔體壓力對元件的開關比與遷移率之效應………33hapter 4 結論與未來展望…………………………………40.1 論文總結…………………………………………………40.2 未來展望…………………………………………………41eference ……………………………………………………42507253 bytesapplication/pdfen-US氧化銦薄膜電晶體Indium oxideTFTthesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/189063/1/ntu-97-R95943064-1.pdf