Qian, Y.Y.QianLiang, Y.Y.LiangLuo, X.X.LuoHe, K.K.HeSun, W.W.SunTalwar, D.N.D.N.TalwarChan, T.-S.T.-S.ChanFerguson, I.I.FergusonWan, L.L.WanYang, Q.Q.YangFeng, Z.C.Z.C.FengHAO-HSIUNG LIN2020-06-112020-06-112018https://www.scopus.com/inward/record.uri?eid=2-s2.0-85050922511&doi=10.1155%2f2018%2f5016435&partnerID=40&md5=10dcae3420a9bd69c6bac1b4492164d4A series of ultrathin InSb films grown on GaAs by low-pressure metalorganic chemical vapor deposition with different V/III ratios were investigated thoroughly using spectroscopic ellipsometry (SE), X-ray diffraction, and synchrotron radiation X-ray absorption spectroscopy. The results predicted that InSb films on GaAs grown under too high or too low V/III ratios are with poor quality, while those grown with proper V/III ratios of 4.20-4.78 possess the high crystalline quality. The temperature-dependent SE (20-300°C) and simulation showed smooth variations of SE spectra, optical constants (n, k, e1, and ϵ2), and critical energy points (E1, E1+Δ1, E′0, E2, and E′1) for InSb film when temperature increased from 20°C to 250°C, while at 300°C, large changes appeared. Our study revealed the oxidation of about two atomic layers and the formation of an indium-oxide (InO) layer of ∼5.4 nm. This indicates the high temperature limitation for the use of InSb/GaAs materials, up to 250°C. © 2018 Yingda Qian et al.Gallium arsenide; III-V semiconductors; Indium antimonides; Metallorganic chemical vapor deposition; Semiconducting gallium; Spectroscopic ellipsometry; Synchrotron radiation; Synchrotrons; Temperature; Ultrathin films; X ray absorption spectroscopy; Atomic layer; Critical energy; High temperature; High-crystalline quality; Indium oxide; Low pressures; Synchrotron radiation x-rays; Temperature dependent; Antimony compoundsjournal article10.1155/2018/50164352-s2.0-85050922511