Lattice strain and in situ chemical depth profiling of nanometer-thick molecular beam epitaxy grown Y<inf>2</inf> O<inf>3</inf> epitaxial films on Si (111)

Lee, Y.J.Y.J.LeeLee, W.C.W.C.LeeHuang, M.L.M.L.HuangWu, S.Y.S.Y.WuNieh, C.W.C.W.NiehMINGHWEI HONGKwo, J.J.KwoHsu, C.-H.C.-H.Hsu2019-12-272019-12-272010https://scholars.lib.ntu.edu.tw/handle/123456789/443389Lattice strain and in situ chemical depth profiling of nanometer-thick molecular beam epitaxy grown Y<inf>2</inf> O<inf>3</inf> epitaxial films on Si (111)conference paper10.1116/1.32757242-s2.0-77953008479https://www.scopus.com/inward/record.uri?eid=2-s2.0-77953008479&doi=10.1116%2f1.3275724&partnerID=40&md5=fdea6b797d76f1bde486e6f1a2973de1