Yang, P.-C.P.-C.YangHsueh, C.-Y.C.-Y.HsuehYang, C.-H.C.-H.YangLee, J.-H.J.-H.LeeLin, H.-W.H.-W.LinChang, H.-Y.H.-Y.ChangChang, C.-Y.C.-Y.ChangSI-CHEN LEE2020-06-112020-06-11200800189383https://scholars.lib.ntu.edu.tw/handle/123456789/498859https://www.scopus.com/inward/record.uri?eid=2-s2.0-49249092518&doi=10.1109%2fTED.2008.925921&partnerID=40&md5=678ffeb142b2fbe43407d6ee14dcc7abThe polycrystalline silicon with regular square grains is fabricated by employing metallic (Cr/Al) periodic pads as the heat sinks and with underlying silicon oxynitride (SiON) as the heat absorption layer. The maximum lateral growth length of the poly-Si is 1.78 μm by this method. If the metal pads are periodically arranged, the poly-Si can grow to regular square grains following the high power excimer laser annealing. After removing the metallic pads, the low power laser shot transfers the a-Si:H under the original metallic pads to poly-Si without destroying the square grains. The TFTs fabricated by this method achieve a field effect mobility of 450 cm2/V· s and an on/off current ratio exceeding 107. It is found that the TFT with smaller channel width and length results in a better subthreshold swing because it contains fewer grain boundaries and defects. © 2008 IEEE.Polycrystalline silicon; Thin film transistor (TFT)Absorption; Amorphous materials; Annealing; Excimer lasers; Gas lasers; Heat storage; Lasers; Metallic soaps; Metals; Nitrides; Nonmetals; Optical design; Polysilicon; Silicon carbide; Thick films; Thin film devices; Thin film transistors; Transistors; Absorption layers; Excimer-laser annealing; Field-effect mobilities; Heat absorption; High powers; Lateral growth; Low-power lasers; Metal pads; Metallic pads; Poly-Si; Polycrystalline silicon; Silicon Carbide devices; Silicon oxynitride; Thin film transistor (TFT); Siliconjournal article10.1109/TED.2008.9259212-s2.0-49249092518https://www.scopus.com/inward/record.uri?eid=2-s2.0-49249092518&doi=10.1109%2fTED.2008.925921&partnerID=40&md5=678ffeb142b2fbe43407d6ee14dcc7ab