Experimental demonstration for ultra-low on-resistance in raised source/drain In<inf>0.53</inf>Ga<inf>0.47</inf>As QW-MOSFETs with implant-free process

Liao, M.-H.M.-H.LiaoChan, P.-G.P.-G.ChanMING-HAN LIAO2020-01-132020-01-132013https://scholars.lib.ntu.edu.tw/handle/123456789/447964Experimental demonstration for ultra-low on-resistance in raised source/drain In<inf>0.53</inf>Ga<inf>0.47</inf>As QW-MOSFETs with implant-free processjournal article10.1088/0022-3727/46/39/3951012-s2.0-84884690349https://www.scopus.com/inward/record.uri?eid=2-s2.0-84884690349&doi=10.1088%2f0022-3727%2f46%2f39%2f395101&partnerID=40&md5=ea90d5601f62ffd167e75b5a76e3d6f6