Kok, Y.L.Y.L.KokLai, R.R.LaiBarsky, M.M.BarskyChen, Y.C.Y.C.ChenSholley, M.M.SholleyBlock, T.T.BlockStreit, D.C.D.C.StreitLiu, P.H.P.H.LiuAllen, B.R.B.R.AllenSmoska, L.L.SmoskaHUEI WANGTIAN-WEI HUANG2020-06-042020-06-041999https://www.scopus.com/inward/record.uri?eid=2-s2.0-8744236390&doi=10.1109%2f75.779912&partnerID=40&md5=13ffe02c7ea167c3d46693e3c07f1ae3This letter presents the results of two 160-190-GHz monolithic low-noise amplifiers (LNA's) fabricated with 0.07-µm pseudomorphic (PM) InAlAs/InGaAs/InP HEMT technology using a reactive ion etch (RIE) via hole process. A peak small signal gain of 9 dB was measured at 188 GHz for the first LNA with a 3-dB bandwidth from 164 to 192 GHz while the second LNA has achieved over 6-dB gain from 142 to 180 GHz. The same design (second LNA) was also fabricated with a 0.08-µm gate and a wet etch process, showing a small-signal gain of 6 dB with 6-dB noise figure. All the measurement results were obtained via on-wafer probing. The LNA noise measurement at 170 GHz is also the first attempt at this frequency. © 1999, by The Institute of Electrical and Electronics Engineers, Inc. All rights reserved.High electron mobility transistor (HEMT); LNA; MMIC; noise figure (NF); pseudomorphic (PM) technologyjournal article10.1109/75.7799122-s2.0-8744236390