Highly directional InAs nanowires grown on Si(111) by selective-area molecular-beam epitaxy

Yang, C.-W.C.-W.YangChen, W.-C.W.-C.ChenHAO-HSIUNG LIN2020-06-112020-06-112016https://scholars.lib.ntu.edu.tw/handle/123456789/500453Highly directional InAs nanowires grown on Si(111) by selective-area molecular-beam epitaxyconference paper10.1109/ISNE.2016.75433142-s2.0-84985930314https://www.scopus.com/inward/record.uri?eid=2-s2.0-84985930314&doi=10.1109%2fISNE.2016.7543314&partnerID=40&md5=380513f2c3c91b784bc13e10fd929848