Growth and band gap of strained 〈110〉 Si<inf>1-x</inf>Ge <inf>x</inf> layers on silicon substrates by chemical vapor deposition

CHEE-WEE LIULiu, C.W.C.W.LiuSturm, J.C.J.C.SturmLacroix, Y.R.J.Y.R.J.LacroixThewalt, M.L.W.M.L.W.ThewaltPerovic, D.D.D.D.PerovicCHEE-WEE LIU2018-09-102018-09-101994http://www.scopus.com/inward/record.url?eid=2-s2.0-0028764144&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/309383Growth and band gap of strained 〈110〉 Si<inf>1-x</inf>Ge <inf>x</inf> layers on silicon substrates by chemical vapor depositionjournal article10.1063/1.113079