2023-01-012024-05-17https://scholars.lib.ntu.edu.tw/handle/123456789/672295藉由H2O2濕蝕刻製程製作出8層堆疊Ge0.75Si0.25奈米片以及7層堆疊Ge0.95Si0.05奈米線，8層堆疊Ge0.75Si0.25奈米片具有高通道一致性。由於L4能谷之小傳輸等效質量(mt)及大能量狀態密度等效質量(mDOS)以及相對低源級/汲級電阻可造成高效能7層堆疊Ge0.95Si0.05奈米線，達到Ge/GeSi三維n型電晶體紀錄單層驅動電流 ION=110A以及高轉導值Gm,max=340S。 磁阻式隨機存取記憶體(MRAM)的特色為可微縮尺寸、高寫入速度以及非揮發性，具有高潛力取代高階級快取之靜態隨機存取記憶體(SRAM)。磁穿隧接面(MTJ)記憶體單元是磁阻式隨機存取記憶體的儲存元件。藉由薄膜沉積及離子束蝕刻製程製作磁穿隧接面單元。利用高阻-W通道做自旋軌道轉矩切換，使用振動試樣磁力計及鐵磁共振獲得磁穿隧接面的磁滯迴線(M-H loop)及減震常數。 The 8-stacked Ge0.75Si0.25 nanosheets and the 7-stacked Ge0.95Si0.05 nanowires are realized by H2O2 wet etching. High inter-channel uniformity of the 8-stacked Ge0.75Si0.25 is demonstrated. Thanks to small transport effective mass (mt) and large DOS effective mass (mDOS) in L4 valley, and low RS/D/Rtotal, high performance of the 7-stacked Ge0.95Si0.05 is demonstrated. The record ION=110A per stack (4100A/m per channel footprint) at VOV=VDS=0.5V and high Gm,max=340S (13000S/m) at VDS=0.5V are achieved among reported Ge/GeSi 3D nFETs. Magnetoresistive random access memory (MRAM) featuring scaled cell size, high write speed, and non-volatility has high potential to replace static random access memory (SRAM) in high-level cache. The magnetic tunnel junction (MTJ) memory cell is the storage element of MRAM. The film deposition and the ion beam etching process of MTJ cells are demonstrated. For the spin-orbit-torque switching, the high-resistivity -W channel is fabricated. The vibrating sample magnetometer and the ferromagnetic resonance are used to obtain the M-H loop and the damping constant of MTJ.奈米片;奈米線;鍺矽;靜態隨機存取記憶體;nanosheets;nanowires;GeSi;SRAM