2016-02-012024-05-17https://scholars.lib.ntu.edu.tw/handle/123456789/684032摘要：台灣已經是世界第二大的太陽能電池生產基地，而面對中國低成本的挑戰， 台灣需要在技術大幅領先，才能擺脫低價代工的宿命，因此，技術發展刻不容緩。 以現有產業技術大概分成三大區塊，一區塊是 N 型高效率單晶技術，可達 24% 轉換效率，由 SunPower 與 Panasonic 主導，一塊是 P 型單晶，轉換效率在 19% 左右，另一區塊也是比例占最高的 P 型多晶技術，效率在 17%左右。後兩項技術 主要由大陸與台灣廠商主導，是一片紅海市場。台灣與大陸在 N 型高效單晶的 發展比較晚，要急起直追，仍難與領先廠商 SunPower 與 Panasonic 相抗衡。在過 去一兩年，中美矽晶與台大長晶團隊在高效多晶長晶技術有突破性的進展，使得 P 型多晶轉換效率大幅成長，效率已接近 18%，由於晶片便宜，快速擠壓 P 型單 晶的市場。然而，對岸在高效多晶抄襲速度相當快，也幾乎趕上台灣的發展。因 此，如何在中間效率找到利基的發展，是相當重要。由於 N 型晶片對金屬雜質忍 受度高， N 型高效多晶與類單晶便顯得相當有潛力。然而，目前市場並沒有 N 型多晶與類單晶的產品，產業化的瓶頸也不是很清晰。因此本產學計畫將從 N 型 鑄碇技術出發，開發高品質低成本(高效)的 N 型多晶與類單晶的長晶關鍵技術， 並了解生長的特性與材料限制，並藉由與 ECN 與電池廠的合作，評價晶片到做 成電池，了解其應用發展的可能性，期待在未來開拓一個新的市場。 目前 N 型多晶與類單晶鑄碇有五個最大的挑戰，第一是自動化不足，需要靠 人工用石英棒監測回融界面，耗費工時與能源; 第二是阻值分佈過大，造成晶碇 可用率過低;第三是錯位缺陷滋生的問題，影響良率與電池效率;第四是金屬與氧 的回擴，影響材料少數載子壽命；第五是晶種與坩堝過於昂貴。因此，這個開發 型的產學計畫，希望藉由與產業合作，找出克服這些問題的關鍵技術，同樣的技 術也可以提升現有 P-型鑄碇技術。計畫將分三年來完成，預計完成自動長晶點的 監測技術，共摻技術，錯位控制技術，阻障層技術，與低成本坩堝、塗布材料， 與單晶減量等關鍵技術開發。<br> Abstract: Since 2008, Taiwan has become the 2nd largest solar cell production country. To face the low-cost challenges from mainland China, which ranks the 1st solar cell and wafer production, it is necessary to develop a differentiated technology. Nowadays, there are three main categories in solar cells. The first category is the solar cells with the highest efficiency up to 24%, dominated by SunPower and Parasonic. The 2nd category is P-type monocrystalline solar cells, having the efficiency around 19%. The third category belongs to the multicrystalline silicon (mc-Si) solar cells, which are mainly produced by China and Taiwan. To compete with the 1st-Tier companies in the 1st category is not practical. To pay attention on the 2nd category is also not meaningful because the wafer cost is still too high. Then, a new category that is emerging is N-type solar cells that based on the low-cost wafers by casting. Therefore, in this joint project with Sino-American Silicon Products Inc. (SAS), we propose to develop some critical technologies for N-type wafers, high-performance mc-Si or quasi-mono. The wafers will be characterized through collaborations with ECN, an well-known institute in N-type solar cell research, with solar cell companies in Taiwan. There are five challenges in N-type ingot production; of course, P-type mc-Si and quai-mono have the similar problems. The first is the dipping process is still relied on labor, so that the cycle time is long and the power consumption is high. The 2nd problem is the resistivity distribution is too wide due to the low segregation coefficient of phosphorous. The 3rd one is the multiplication of dislocations. This problem for mc-Si has been mostly resolved, but not yet for quai-mono. The forth challenge is the back diffusion of metals and oxygen is too much, so that the growth yield is low and the minority lifetime is also affected. The fifth one is that the cost for the seeds and crucibles is still too high. Therefore, in this project, we will spend three years in developing the critical technologies to resolve these issues. The same technologies should also be useful for the current P-type mc-Si and quasi-mono products.太陽能電池N型多晶類單晶鑄碇長晶Solar cellN-typeMulticrystallineQuasi-monoCasting