First Highly Stacked Ge0.95Si0.05 nGAAFETs with Record ION = 110 μA (4100 μA/μm) at VOV=VDS=0.5V and High Gm,max = 340 μS (13000 μS/μm) at VDS=0.5V by Wet Etching

Liu Y.-CTu C.-TTsai C.-EChen Y.-RChen J.-YJan S.-RHuang B.-WChueh S.-JTsen C.-JCHEE-WEE LIU2023-06-092023-06-0920217431562https://www.scopus.com/inward/record.uri?eid=2-s2.0-85120758953&partnerID=40&md5=daf370b14962b3b505c67f8977efe79fhttps://scholars.lib.ntu.edu.tw/handle/123456789/632205The 8-stacked Ge0.75Si0.25 nanosheets and the 7-stacked Ge0.95Si0.05 nanowires are realized by H2O2 wet etching. High inter-channel uniformity of the 8-stacked Ge0.75Si0.25 is demonstrated. Thanks to small transport effective mass (mt) and large DOS effective mass (mDOS) in L4 valley, and low RS/D/Rtotal, high performance of the 7-stacked Ge0.95Si0.05 is demonstrated. The record ION=110μA per stack (4100μA/μm per channel footprint) at VOV=VDS=0.5V and high Gm,max=340μS (13000μS/μm) at VDS=0.5V are achieved among reported Ge/GeSi 3D nFETs. © 2021 JSAPFirst Highly Stacked Ge0.95Si0.05 nGAAFETs with Record ION = 110 μA (4100 μA/μm) at VOV=VDS=0.5V and High Gm,max = 340 μS (13000 μS/μm) at VDS=0.5V by Wet Etchingconference paper2-s2.0-85120758953