Chuang YLiu C.-YLuo G.-LJIUN-YUN LI2021-09-022021-09-02202107413106https://www.scopus.com/inward/record.uri?eid=2-s2.0-85098648827&doi=10.1109%2fLED.2020.3041051&partnerID=40&md5=d6cae0ef23b9fba24d23f88ab45f44achttps://scholars.lib.ntu.edu.tw/handle/123456789/581010A record high electron mobility of 698 cm2/ Vcs in a tensile-strained Ge0.96Sn0.04 nMOSFET is demonstrated in this letter. High-quality GeSn films were epitaxially grown by lowerature chemical vapor deposition. Different strain conditions in the active GeSn layers were achieved by Ge or GeSn relaxed buffers. A mesa FET structure was used to effectively reduce the OFF leakage by a recessed p/n junction in Ge. The ION/IOFF ratio in the mesa GeSn FETs is boosted by a factor of 100 compared to conventional planar devices. As the GeSn film becomes more tensile strained, the channel mobility is enhanced, which could be attributed to a higher carrier population in the Γ valley. ? 1980-2012 IEEE.Chemical vapor deposition; Electron mobility; Hall mobility; Hole mobility; MOSFET devices; Semiconductor alloys; Tensile strain; Carrier population; Channel mobility; Epitaxially grown; High electron mobility; Mobility enhancement; Planar devices; Relaxed buffer; Strain conditions; Tin alloysjournal article10.1109/LED.2020.30410512-s2.0-85098648827