Effects of low-temperature Si buffer layer thickness on the growth of SiGe by molecular beam epitaxy

CHIEH-HSIUNG KUANLee, S.W.S.W.LeeChen, H.C.H.C.ChenChen, L.J.L.J.ChenPeng, Y.H.Y.H.PengKuan, C.H.C.H.KuanCheng, H.H.H.H.ChengCHIEH-HSIUNG KUAN2018-09-102018-09-102002http://www.scopus.com/inward/record.url?eid=2-s2.0-0036904201&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/298222Effects of low-temperature Si buffer layer thickness on the growth of SiGe by molecular beam epitaxyjournal article10.1063/1.1516842