3C-, 4H- and 6H-SiC bulks studied by silicon k-edge X-ray absorption

Zheng, W.W.ZhengFeng, Z.C.Z.C.FengZheng, R.S.R.S.ZhengJang, L.-Y.L.-Y.JangCHEE-WEE LIU2020-06-162020-06-162013https://scholars.lib.ntu.edu.tw/handle/123456789/5021343C-, 4H- and 6H-SiC bulks studied by silicon k-edge X-ray absorptionconference paper10.4028/www.scientific.net/MSF.740-742.5732-s2.0-84874069881https://www.scopus.com/inward/record.uri?eid=2-s2.0-84874069881&doi=10.4028%2fwww.scientific.net%2fMSF.740-742.573&partnerID=40&md5=643531cb141d6c132246e7b45c0faa36