Zhang HTZU-HSUAN CHANGMin SMa Z.2023-06-092023-06-092021https://www.scopus.com/inward/record.uri?eid=2-s2.0-85106532692&doi=10.1109%2fEDTM50988.2021.9420962&partnerID=40&md5=198fa1f64e9ef25a43f7402400899e55https://scholars.lib.ntu.edu.tw/handle/123456789/632298Flexible electronic devices operating in the GHz range is critical for applications like wireless communication and radars. GaN-based transistors have been extensively studied in rigid microwave electronics for high-frequency and high-power applications due to their superior properties of AlGaN/GaN heterostructure. Here, we review our recent research on flexible microwave electronics based on GaN HEMT, including high-performance flexible GaN HEMTs on conventional plastic substrates, biodegradable cellulose nanofibril substrates, and GaN HEMT-based flexible microwave circuits. © 2021 IEEE.amplifier; flexible electronics; GaN HEMT[SDGs]SDG7Aluminum gallium nitride; Biodegradable polymers; Flexible electronics; Gallium nitride; High electron mobility transistors; III-V semiconductors; Microwave circuits; Wide band gap semiconductors; AlGaN/GaN heterostructures; Flexible electronic devices; High frequency HF; High power applications; Microwave electronics; Plastic substrates; Recent researches; Wireless communications; Substrates; Communication; Electronics; Frequency; Performance; Plastics; Research; Review; Substratesconference paper10.1109/EDTM50988.2021.94209622-s2.0-85106532692