2017-08-012024-05-18https://scholars.lib.ntu.edu.tw/handle/123456789/704382摘要:異質介面由於其邊界條件具有特殊物理性質,因此引起各界的廣泛討論。由於對於介面系統的研究動機,將樣品在超高真空系統中切斷形成裂截面,再利用剖面式掃描穿隧顯微鏡對介面處進行實驗研究。 此份報告中,對三種釔鋇銅氧介面進行討論:第一個部分是闡述關於通過超導體釔鋇銅氧與鐵磁材料鑭鈣錳氧的研究,由電子結構特性通過介面的變化顯示由鄰近效應引起的自旋三重態存在,結果同時顯示超導體與鐵磁材料之間彼此交互影響的同調長度。第二個部分是藉由量測釔鋇銅氧薄膜沿著c軸的原子與電性結構,釔鋇銅氧的銅氧面與銅氧鍊上的電荷密度的周期性變化,顯示了銅氧面與銅氧鍊間電子結構的關係。第三個部分是觀察因為介面之間的應力效應所造成的釔鋇銅氧薄膜的形貌以及電性差異。 <br> Abstract: The unique abilities of using XSTM to study the heterostructures allows us to explore the interesting properties of novel interfacial structures. In the first case, the detailed investigation of the electronic structures across the interface between the superconductor YBa2Cu3O7-δ and the ferromagnetism La0.7Ca0.3MnO3 is studied. The proximity induced triplet state is demonstrated from the evolution of interfacial electronic properties at the interface. Results also reveal the spatial resolved coherent length between superconductor and ferromagnetism. The second case illustrated that charge density wave (CDW) order found as a universal factor in underdoped high-Tc supercon- ductors. However, a clear picture of the CDW order through CuO2 planes remains an open question. The cross-sectional scanning tunneling microscopy and spectroscopy measurement on YBa2Cu3O6.81 thin film are probed both atomic and electronic structure simultaneously along the c-axis. The real-space observation reveals the existence of the charge modulation on CuO2 plane and CuO chain layers. The third case shows the surface morphology and electronic structure of YBa2Cu3O7-δ (YBCO) nanostructures investigated using scanning tunneling microscopy and spectroscopy at 110 K and 24 K. The shape of nanostructures is changed from a square-like grain to a rectangle-like grain with increasing temperature from 24 K to 110 K. Interestingly, an anisotropic density of states (DOS) distribution is observed on nanostructures at 110 K but a uniform DOS distribution at 24 K超導體電子結構異質介面釔鋇銅氧掃描穿隧式顯微supersonductorelectronic structureheterojunctionsYBCOscanning tunneling microscopy (STM)利用剖面掃描穿隧能譜探討鄰近效應對超導異質介面電子結構之影響(3/3)