C. HongQ ChengP. WangL. YangY. ChenJAMES-B KUO2018-09-102018-09-102015-12https://www.scopus.com/inward/record.uri?eid=2-s2.0-84959568055&doi=10.1109%2fTED.2015.2484838&partnerID=40&md5=a0e31b1283f2165bb50eb54935498375For the first time, an analytic surface-field-based model for nanowire MOSFETs with random dopant fluctuations (RDF) is reported. In this model, the depletion charge due to the discrete dopant distribution is described by the Dirac δ functions, while the mobile charge keeps its continuous form. By introducing two new variables, the discrete 1-D Poisson's equation is transformed into a simple algebraic equation to correlate the surface potential with the field (due to the inversion charge). Without solving the potential distribution, the drain current can be calculated from the Pao-Sah integral using the oxide-interface boundary condition. This model is shown to be more accurate in predicting the RDF effects than the continuous TCAD simulations for all the operating regions. We also discuss the RDF-incorporated short-channel effects by solving the discrete 2-D Poisson's equation in the subthreshold regime. © 2014 IEEE.Dirac δ function; discrete Poisson's equation; random dopant fluctuations (RDFs); surface-field-based model.Delta functions; Drain current; MOSFET devices; Nanowires; Algebraic equations; Atomistic modeling; Dirac delta function; Dopant distribution; Operating regions; Potential distributions; Random dopant fluctuation; Short-channel effect; Poisson equationjournal article10.1109/TED.2015.24848382-s2.0-84959568055WOS:000365225700037