High-Linearity High-Current-Drivability Ga0.51In0.49P/GaAs MISFET Using Ga0.51In0.49P Airbridge Gate Structure Grown by GSMBE

SHEY-SHI LU2018-09-102018-09-101995http://www.scopus.com/inward/record.url?eid=2-s2.0-0029406373&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/316531High-Linearity High-Current-Drivability Ga0.51In0.49P/GaAs MISFET Using Ga0.51In0.49P Airbridge Gate Structure Grown by GSMBEjournal article10.1109/55.468286