Hong J.-Y.Hung C.-F.Yang K.-H.O.Chiu K.-C.Ling D.-C.Chiang W.-C.MINN-TSONG LIN2021-07-282021-07-28202120452322https://www.scopus.com/inward/record.uri?eid=2-s2.0-85102704363&doi=10.1038%2fs41598-021-84749-x&partnerID=40&md5=16e0f20d53fa3d8a9468db80455b0968https://scholars.lib.ntu.edu.tw/handle/123456789/573756We report spin-dependent transport properties and I–V hysteresis characteristics in an AlO x-based magnetic tunnel junction (MTJ). The bipolar resistive switching and the magnetoresistances measured at high resistance state (HRS) and low resistance state (LRS) yield four distinctive resistive states in a single device. The temperature dependence of resistance at LRS suggests that the resistive switching is not triggered by the metal filaments within the AlO x layer. The role played by oxygen vacancies in AlO x is the key to determine the resistive state. Our study reveals the possibility of controlling the multiple resistive states in a single AlO x-based MTJ by the interplay of both electric and magnetic fields, thus providing potential applications for future multi-bit memory devices. ? 2021, The Author(s).journal article10.1038/s41598-021-84749-x337275772-s2.0-85102704363