李嗣涔臺灣大學:電子工程學研究所吳哲寬Wu, Che-KuanChe-KuanWu2010-07-142018-07-102010-07-142018-07-102009U0001-2807200913401600http://ntur.lib.ntu.edu.tw//handle/246246/189285本論文是關於利用低溫溶液製程來製作多晶矽粉之薄膜電晶體的研究，並且使用液相沉積成長(LPD)的二氧化矽(SiO2)來做為薄膜電晶體的閘極絕緣層。我們發現當多晶矽粉的塗佈在石英基板之後，利用KrF準分子雷射在室溫下從石英基板背面方向照射多晶矽粉，在適當的雷射能量之下可以形成平均200 nm厚度的多晶矽粉薄膜，此多晶矽粉薄膜擁有高導電度並且與石英基板附著性很好。液相沉積成長(LPD)的二氧化矽(SiO2)是一種特別且具有淺力的成長技術，但是由液相沉積成長有時候會產生厚度不均勻的問題，原因實驗過程會漸漸產生二氧化矽懸浮物在成長的溶液中，此懸浮物會掉落到二氧化矽膜上並且被埋在二氧化矽膜內，其厚度會不均勻。我們發現在液相沉積成長的時候，將樣品的由正面由上改為正面朝下放置在溶液內成長，懸浮物只會沉殿在樣品的背面，而樣品的正面可以成長出厚度較為均勻的二氧化矽膜。最後，我們製作出多晶矽粉薄膜之蕭特基薄膜電晶體，經過NH3電將處理多晶矽粉通道薄膜之後，其最好的之場效電子遷移率可以達到0.86 and 0.11 cm2V-1s-1，而且其最好的開／關電流為四十倍。　The performance of low temperature, solution-based silicon particles thin film transistor with liquid phase deposition (LPD) of silicon dioxide (SiO2) as gate insulator were studied in the thesis. The silicon-particles thin film formed after irradiating the silicon particles by a pulsed KrF excimer laser from the substrate side of the quartz substrate, the average thickness of silicon particles thin film was 200 nm. This thin film adhered to the quartz substrate very well and the best conductivity of the thin film were 1.6×10-1 Ω-1cm-1 , respectively. Liquid phase deposition (LPD) is a special and potential technique for deposition of silicon dioxide. However the uniformity of LPD-SiO2 is not good because of the powder in the H2SiF6 solution. These powders fall on the LPD-SiO2 of substrate, and finally the powders are burid in the LPD-SiO2 film. To solve this precipitation problem of the LPD-SiO2, we discover that the growth face of the substrate can be changed from up to down, then, the powder only fall on the back side of substrate. Finally, the schottky contact TFT which was using silicon-particles film and LPD-SiO2 as gate insulator were fabricated and measure. The field effect mobility of TFTs with NH3 treatment were 0.86 and 0.11 cm2V-1s-1 and the best ON/OFF current ratio in these four samples is about 40.Chapter 1 Introduction……………………………1hapter 2 Liquid Phase Deposition (LPD) nd Experiments………………………4.1 Liquid Phase Deposition (LPD) of SiO2…………...4.1.1 Experiments……………………………………………4.1.2 Effect of Dilution……………………………………….5.1.3 Uniformity of LPD-SiO2……………………………….6.1.4 MOS capacitors Using LPD-SiO2……………………..10.2 Measurement Techniques………………………….15.2.1 Film Thickness and Refractive Index………………….15.2.2 IR Absorption Spectra………………………………….15.2.3 Poly Silicon Particles Crystallization Characteristics….15.2.4 Transmittance and Reflectance…………………………15.2.5 Current – Voltage Characteristics………………………16hapter 3 The Fabrication Processes of Solution-Based Silicon Thin Film…….19.1 Experiments………………………………………….19.1.1 Preparation of Silicon Particles and ilicon-Particles Solution………………………..……..19.1.2 Fabrication Processes of the Continuous ilicon-particles Thick Film……………………………..20.1.3 Excimer Laser Annealing (ELA) of i-Particles Thick Film………………………………….22.1.4 The Fabrication Processes of Si-Particles Thin Film……25.2 Results and Discussion………………………………27hapter 4 Silicon-Particles Thin Film Transistor with Liquid Phase Deposition of Silicon Dioxide as Gate Insulator………………40.1 Experiments………………………………………….40.2 Results and discussion……………………………….41.2.1 Silicon-Particles TFTs without NH3 Plasma Treatment…41.2.2 Silicon-Particles TFTs with NH3 Plasma Treatment…….41.2.3 The Instability of the Fabrication Processes of ilicon- Particles TFTs………………………………….55hapter 5 Conclusions……………………………..58136 bytestext/htmlen-US溶液薄膜電晶體溶液製程solutionsolution processtftthesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/189285/1/index.html