Yen CChang SChen KFeng YChen LLiao BLee MChen SLiao M.MING-HAN LIAO2022-03-222022-03-22202200189383https://www.scopus.com/inward/record.uri?eid=2-s2.0-85123301998&doi=10.1109%2fTED.2022.3140705&partnerID=40&md5=1b6bfe3ed98edac9f64fd6d0351f314fhttps://scholars.lib.ntu.edu.tw/handle/123456789/598960With the usage of gas ferrocene Fe(C₅H₅)₂ as a reactant, which is different from the traditional thin Fe film, to grow the high-quality carbon nanotubes (CNTs) in the high aspect ratio (AR) trench structure, it has many advantages to be the through-silicon vias (TSVs) material for the three-dimensional (3-D) stacking technology. In this work, we successfully demonstrate the full process flow, including CNT growing, chemical-mechanical planarization (CMP), and wafer temporary bonding for CNTs as TSVs in the 3-D stacking connection. The flexibility for this demonstrated process flow makes the integration of real high dense devices and CNTs as TSVs for the 3-D connection more easily. IEEE3-D stacking technologyBondingCarbon nanotubescarbon nanotubes (CNTs)Conductivityferrocene Fe(C₅H₅)₂IronSiliconStackingThrough-silicon viasthrough-silicon vias (TSVs).The Demonstration of High-Quality Carbon Nanotubes as Through-Silicon Vias (TSVs) for Three-Dimensional Connection Stacking and Power-Via Technologyjournal article10.1109/TED.2022.31407052-s2.0-85123301998