Piezoelectric field effect transistor (PEFET) using In0.2Ga0.8As/Al0.35Ga0.65As/In0.2Ga0.8As/GaAs strained layer structure on (111)B GaAs substrate

SHEY-SHI LU2018-09-102018-09-101994http://www.scopus.com/inward/record.url?eid=2-s2.0-0028430084&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/309337[SDGs]SDG7Piezoelectric field effect transistor (PEFET) using In0.2Ga0.8As/Al0.35Ga0.65As/In0.2Ga0.8As/GaAs strained layer structure on (111)B GaAs substratejournal article10.1049/el:19940432