B. MarholevTSUNG-HSIEN LINRofougaran A.Rofougaran M.Syed M.Lee R.Wong Y.C.Lin J.Mak S.Lettieri P.Kim H.Jensen H.Ibrahim B.Chien C.M.Castaneda J.Zolfaghari A.Anand S.Khorram S.Kappes M.Bhatti I.Wu S.Roufoogaran R.Zhang L.Chien E.Pan M.Marholev B.2018-09-102018-09-102007-0201936530http://scholars.lib.ntu.edu.tw/handle/123456789/334025https://www.scopus.com/inward/record.uri?eid=2-s2.0-34548816741&doi=10.1109%2fISSCC.2007.373542&partnerID=40&md5=d3e086a920832603122cf9106444ce63A low-power single-chip Bluetooth EDR device is realized using a configurable transformer-based RF front-end, a low-IF receiver and a direct-conversion transmitter architecture. It is implemented in a 0.13μm CMOS process and occupies 11.8mm2. Sensitivity for 1, 2 and 3Mb/s rates is -88, -90, and -84dBm and transmitter differential EVM is 5.5% rms. © 2007 IEEE.[SDGs]SDG7CMOS integrated circuits; Electric transformers; Energy conversion; Microprocessor chips; Sensitivity analysis; Conversion transmitter architecture; Single chip Bluetooth; BluetoothA Single-Chip Bluetooth EDR Device in 0.13μm CMOSconference paper10.1109/isscc.2007.3735422-s2.0-34548816741