2016-08-312024-05-16https://scholars.lib.ntu.edu.tw/handle/123456789/667421摘要:隨著系統晶片技術的進步,電子元件的空間佔用被大幅的縮小,並且可同時處理多種不同程序,使得其應用價值大幅提昇。但緣於系統晶片係建立於矽基板之製程技術,令許多晶格常數或熱膨脹係數無法與之匹配的材料,無法順利地運用此磊晶/製程技術,紅外線偵測器便是一例。 紅外線偵測器運用範圍極為廣泛,包含軍事、醫用造影、環境監測,甚至是市場中。有別於可見光偵測器,紅外線偵測器多利用之材料,如HgCdTe,InSb,或InGaAs,均無法運用系統晶片之製程技術來將所需之讀出線路與影像處理線路整合至一晶片上,另一方面,也由於製程中之種種不確定性所造成的響應度、偵測率不一,更增加了共焦平面陣列之製作,以及後端的元件整合的困難度。 在計畫中,我們將組合量子井與超晶格結構,製作一具寬頻譜偵測波段之紅外線偵測器,更於元件表面製作週期結構,以增加元件之響應。有別於使用一般光學模擬方法來預測結構參數,我們引進並考慮表面漸逝波所帶來之影響,計算預測可得最佳吸收之之光學結構,再配合製程技術之優化,改善元件的各項性能。同時,新的自適應技術及其硬/軟體也將被運用,自製程中所產生之部分不可避免之變數也將可被消除。 <br> Abstract: The advance of fabrication technology has revealed that nano-devices prevail and integration of all function blocks on a System-on-Chip (SoC) is an inevitable trend. However, the booming research results on nano-devices do not bring the devices in the products that we use daily; an infrared (IR) photodetector is an example. The use of IR detectors has been widely exploited in military, medical imaging, and environment monitoring, and consumers markets. Different from visible light detectors, the material, such as HgCdTe, InSb, or InGaAs, used by IR detectors could not be fabricated on the same chip with necessary readout and imaging processing circuits. On the other hand, responsivity and detectivity variations make the design and implementation of an IR focal plane array SoC even harder. In this project, we will fabricate an infrared photodetector with multi-detection band which are constructed by integrating superlattice and quantum well structure. Moreover, periodic structure will be constructed on the surface of the detector to improve its responsivity. Different from traditional optics simulations, we take the effect of evanescent wave into consideration and setup a new optics simulation, called “over-sized Fourier series expansion method”. Proper surface structures which could induce higher absorption will be estimated through the simulation. Accompany with the improvement of fabrication process, the performance of the photodetector will be greatly improved. Additionally, new fabrication and hardware/software self-adapting technologies will also be introduced. The performance degradation resulted from process variations can be eliminated by applying our novel self-adapting techniques.量子井雙波段紅外線偵測器光學模擬Quantum wellDual-ColorInfrared PhotodetectorOver-size Fourier Series Expansion多重量子井紅外線光譜偵測系統晶片