呂學士臺灣大學：電子工程學研究所汪濤Wang, TaoTaoWang2007-11-272018-07-102007-11-272018-07-102004http://ntur.lib.ntu.edu.tw//handle/246246/57248本論文應用微機電技術將其應用於射頻積體電路，將技術實現在晶片後，其電感品質因素因此提升，譬如3.5圈的電感，在底下的基板在掏空之後，其最大品質因素增加22%，而雜訊指數在6GHz處降低0.4dB，除此之外，另一種與基板相隔一層極厚介電質的微機電電感亦被實驗與量測，雖然他的品質因素極高，但是S11與S22卻相當不對稱，此不對稱原因在於其兩埠中，有一點的跨線與基板太近所致。 為了將微機電式元件應用在射頻電路，特別將基板掏空的技術實現在一個雙頻帶低雜訊放大器中，在相同的偏壓下，其2.4GHz 與 4.9GHz 的雜訊指數分別降低0.23dB與0.36dB。A new technology based on MEMS processes is developed to improve RFICs. On-chip inductor with Q-factor enhancement is realized by micromachining. The substrate under inductors is successfully etched and removed. Qmax of a 3.5 turn inductor increased by 22% after the post processing and the NF is reduced by 0.4dB at 6GHz. Another inductor with thick dielectric is realized and tested. Though the quality factor of this inductor is high, the asymmetry of S11 and S22 is very serious. This mismatch exists because the underpass is too close to silicon substrate. To integrate MEMS device on RFICs, the substrate etching technology is applied to a dual-band LNA, On condition that the same chip is biased with the same power consumption, noise figure is reduced by 0.23dB at 2.4GHz and 0.36dB at 4.9GHz.Chapter 1 Introduction……………………………….1 1.1 Motivation………………………………………..1 1.2 Device Level……………………………………..2 1.3 Circuit Level……………………………………..2 1.4 Thesis Organization……………………………...2 Chapter 2 Inductor and Transformer……………….4 2.1 Spiral Inductors……………………………………4 2.2 Quality Factor of Inductor…………………………7 2.3 Deembedding………………… ………………… 11 2.4 Inductor Model……………………………………12 2.5 RLC Extraction……………………………………15 2.6 Noise Figure of Indutor……………………..…….18 2.7 Transformer…………………………………..…...20 2.8 Performance Parameter of Transformer………..…21 Chapter 3 RF MEMS Device………………………..28 3.1 MEMS Inductor……………………………..……28 3.2 Substrate Etched Inductor…………………..…….29 3.3 RF MEMS Technology…………………...………30 3.4 Substrate Etched Inductor Experiment………..….35 3.5 MEMS Inductor on Thick Dielectric………..……38 Chapter 4 RF MEMS Circuit……………………….43 4.1 RF MEMS LNA……………………………….....43 4.2 RF MEMS Mixer………………………………....49 Chapter 5 Conclusion………………………………..56780226 bytesapplication/pdfen-US射頻電路 電感 微機電RFIC Inductor MEMSthesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/57248/1/ntu-93-R91943109-1.pdf